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irg7ph35upbf IRG7PH35U-EP 1 www.irf.com 3/26/10 gc e gate collector emitter to-247ac irg7ph35upbf to-247ad IRG7PH35U-EP g c e c g c e c v ces = 1200v i nominal = 20a t j(max) = 175c v ce(on) typ. = 1.9v pd - 97479 e c g n-channel insulated gate bipolar transistor features ? low v ce (on) trench igbt technology ? low switching losses ? maximum junction temperature 175 c ? square rbsoa ? 100% of the parts tested for i lm ? positive v ce (on) temperature co-efficient ? tight parameter distribution ? lead -free benefits ? high efficiency in a wide range of applications ? suitable for a wide range of switching frequencies due to low v ce (on) and low switching losses ? rugged transient performance for increased reliability ? excellent current sharing in parallel operation applications ? u.p.s ? welding ? solar inverter ? induction heating absolute maximum ratin g s parameter max. units v ces collector-to-emitter voltage 1200 v i c @ t c = 25c continuous collector current 55 i c @ t c = 100c continuous collector current 35 i nominal nominal current 20 i cm pulse collector current, v ge =15v 60 i lm clamped inductive load current, v ge =20v 80 v ge continuous gate-to-emitter voltage 30 v p d @ t c = 25c maximum power dissipation 210 p d @ t c = 100c maximum power dissipation 105 t j operating junction and -55 to +175 t stg storage temperature range soldering temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case) mounting torque, 6-32 or m3 screw 10 lbfin (1.1 nm) thermal resistance parameter min. typ. max. units r jc (igbt) thermal resistance junction-to-case-(each igbt) ??? ??? 0.70 r cs thermal resistance, case-to-sink (flat, greased surface) ??? 0.24 ??? r ja thermal resistance, junction-to-ambient (typical socket mount) ??? 40 ??? c/w a w c
irg7ph35upbf/IRG7PH35U-EP 2 www.irf.com notes: v cc = 80% (v ces ), v ge = 20v, r g = 10 . pulse width limited by max. junction temperature. refer to an-1086 for guidelines for measuring v (br)ces safely. r is measured at
electrical characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units conditions v ( br ) ces collector-to-emitter breakdown voltage 1200 ? ? v v ge = 0v, i c = 250 a v (br)ces / t j temperature coeff. of breakdown voltage ?1.2?v/cv ge = 0v, i c = 1ma (25c-150c) v ce ( on ) collector-to-emitter saturation voltage ? 1.9 2.2 v i c = 20a, v ge = 15v, t j = 25c ?2.3? i c = 20a, v ge = 15v, t j = 150c ?2.4? i c = 20a, v ge = 15v, t j = 175c v ge ( th ) gate threshold voltage 3.0 ? 6.0 v v ce = v ge , i c = 600 a v ge ( th ) / tj threshold voltage temp. coefficient ? -16 ? mv/c v ce = v ge , i c = 600 a (25c - 150c) gfe forward transconductance ? 22 ? s v ce = 50v, i c = 20a, pw = 30 s i ces collector-to-emitter leakage current ? 2.0 100 av ge = 0v, v ce = 1200v ?2000? v ge = 0v, v ce = 1200v, t j = 175c i ges gate-to-emitter leakage current ? ? 100 na v ge = 30v switching characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units q g total gate charge (turn-on) ? 85 130 i c = 20a q g e gate-to-emitter charge (turn-on) ? 15 20 nc v ge = 15v q g c gate-to-collector charge (turn-on) ? 35 50 v cc = 600v e on turn-on switching loss ? 1060 1300 i c = 20a, v cc = 600v, v ge = 15v e off turn-off switching loss ? 620 850 jr g = 10 , l = 200uh, l s = 150nh, t j = 25c e total total switching loss ? 1680 2150 energy losses include tail & diode reverse recovery t d ( on ) turn-on delay time ? 30 50 diode clamp the same as irg7ph35udpbf t r rise time ? 15 30 ns t d ( off ) turn-off delay time ? 160 180 t f fall time ? 80 105 e on turn-on switching loss ? 1880 ? i c = 20a, v cc = 600v, v ge =15v e off turn-off switching loss ? 1140 ? jr g =10 , l=200uh, l s =150nh, t j = 175c e total total switching loss ? 3020 ? energy losses include tail & diode reverse recovery t d ( on ) turn-on delay time ? 25 ? diode clamp the same as irg7ph35udpbf t r rise time ? 20 ? ns t d ( off ) turn-off delay time ? 200 ? t f fall time ? 200 ? c ies input capacitance ? 1940 ? pf v ge = 0v c oes output capacitance ? 60 ? v cc = 30v c res reverse transfer capacitance ? 40 ? f = 1.0mhz t j = 175c, i c = 80a rbsoa reverse bias safe operating area full square v cc = 960v, vp =1200v rg = 10 , v ge = +20v to 0v conditions
irg7ph35upbf/IRG7PH35U-EP www.irf.com 3 fig. 2 - maximum dc collector current vs. case temperature fig. 3 - power dissipation vs. case temperature fig. 4 - forward soa t c = 25c, t j 175c; v ge =15v fig. 5 - reverse bias soa t j = 175c; v ge = 20v fig. 1 - typical load current vs. frequency (load current = i rms of fundamental) 25 50 75 100 125 150 175 t c (c) 0 10 20 30 40 50 60 i c ( a ) 0 25 50 75 100 125 150 175 t c (c) 0 50 100 150 200 250 p t o t ( w ) 10 100 1000 10000 v ce (v) 1 10 100 1000 i c ( a ) 1 10 100 1000 10000 v ce (v) 0.1 1 10 100 i c ( a ) 10 s 100 s 1ms dc 0.1 1 10 100 f , frequency ( khz ) 0 5 10 15 20 25 30 35 40 45 l o a d c u r r e n t ( a ) for both: duty cycle : 50% tj = 150c tc = 100c gate drive as specified power dissipation = 70w i square wave: v cc diode as specified
irg7ph35upbf/IRG7PH35U-EP 4 www.irf.com fig. 11 - typical v ce vs. v ge t j = 175c fig. 6 - typ. igbt output characteristics t j = -40c; tp = 30 s fig. 7 - typ. igbt output characteristics t j = 25c; tp = 30 s fig. 8 - typ. igbt output characteristics t j = 175c; tp = 30 s fig. 10 - typical v ce vs. v ge t j = 25c fig. 9 - typical v ce vs. v ge t j = -40c 0 2 4 6 8 10 v ce (v) 0 10 20 30 40 50 60 70 80 i c e ( a ) v ge = 18v v ge = 15v v ge = 12v v ge = 10v v ge = 8.0v 0 2 4 6 8 10 v ce (v) 0 10 20 30 40 50 60 70 80 i c e ( a ) v ge = 18v v ge = 15v v ge = 12v v ge = 10v v ge = 8.0v 4 8 12 16 20 v ge (v) 1 2 3 4 5 6 7 8 v c e ( v ) i ce = 10a i ce = 20a i ce = 40a 5 101520 v ge (v) 1 2 3 4 5 6 7 8 v c e ( v ) i ce = 10a i ce = 20a i ce = 40a 5101520 v ge (v) 1 2 3 4 5 6 7 8 v c e ( v ) i ce = 10a i ce = 20a i ce = 40a 0 2 4 6 8 10 v ce (v) 0 10 20 30 40 50 60 70 80 i c e ( a ) v ge = 18v v ge = 15v v ge = 12v v ge = 10v v ge = 8.0v
irg7ph35upbf/IRG7PH35U-EP www.irf.com 5 fig. 12 - typ. transfer characteristics v ce = 50v, tp = 30 s fig. 13 - typ. energy loss vs. i c t j = 175c; l = 680 h; v ce = 600v, r g = 10 ; v ge = 15v fig. 15 - typ. energy loss vs. r g t j = 175c; l = 680 h; v ce = 600v, i ce = 20a; v ge = 15v fig. 16 - typ. switching time vs. r g t j = 175c; l = 680 h; v ce = 600v, i ce = 20a; v ge = 15v fig. 14 - typ. switching time vs. i c t j = 175c; l = 680 h; v ce = 600v, r g = 10 ; v ge = 15v 0 20 40 60 80 100 r g ( ) 500 1000 1500 2000 2500 3000 3500 e n e r g y ( j ) e on e off 0 10203040 i c (a) 0 1000 2000 3000 4000 e n e r g y ( j ) e off e on 0 10 20 30 40 i c (a) 1 10 100 1000 s w i c h i n g t i m e ( n s ) t r td off t f td on fig. 17 - typ. capacitance vs. v ce v ge = 0v; f = 1mhz 0 100 200 300 400 500 600 v ce (v) 10 100 1000 10000 c a p a c i t a n c e ( p f ) cies coes cres 0 20 40 60 80 100 r g ( ) 10 100 1000 10000 s w i c h i n g t i m e ( n s ) t r td off t f td on 45678910 v ge, gate-to-emitter voltage (v) 0 10 20 30 40 50 60 70 80 i c , c o l l e c t o r - t o - e m i t t e r c u r r e n t ( a ) t j = 175c t j = 25c
irg7ph35upbf/IRG7PH35U-EP 6 www.irf.com fig. 18 - typical gate charge vs. v ge i ce = 20a; l = 2.4mh fig 20. maximum transient thermal impedance, junction-to-case 1e-006 1e-005 0.0001 0.001 0.01 0.1 t 1 , rectangular pulse duration (sec) 0.001 0.01 0.1 1 t h e r m a l r e s p o n s e ( z t h j c ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc j j 1 1 2 2 3 3 r 1 r 1 r 2 r 2 r 3 r 3 ci i / ri ci= i / ri c 4 4 r 4 r 4 ri (c/w) i (sec) 0.017 0.000013 0.218 0.000141 0.299 0.002184 0.177 0.013107 fig. 19 - typical gate threshold voltage (normalized) vs. junction temperature 0 20406080100 q g , total gate charge (nc) 0 2 4 6 8 10 12 14 16 v g e , g a t e - t o - e m i t t e r v o l t a g e ( v ) v ces = 600v v ces = 400v 25 50 75 100 125 150 175 t j , temperature (c) 0.4 0.6 0.8 1.0 v g e ( t h ) , g a t e t h r e s h o l d v o l t a g e ( n o r m a l i z e d ) i c = 600 a
irg7ph35upbf/IRG7PH35U-EP www.irf.com 7 fig.c.t.1 - gate charge circuit (turn-off) fig.c.t.2 - rbsoa circuit fig.c.t.3 - switching loss circuit fig.c.t.4 - resistive load circuit fig.c.t.5 - bvces filter circuit 100k 22k dut d1 0.0075 g force c fo rce c sen se e fo rce e sen se l rg 80 v dut vclamped + - l rg vcc diode clamp dut / driver 1k vcc dut 0 l rg vcc dut r = vcc icm
irg7ph35upbf/IRG7PH35U-EP 8 www.irf.com fig. wf1 - typ. turn-off loss waveform @ t j = 175c using fig. ct.4 fig. wf2 - typ. turn-on loss waveform @ t j = 175c using fig. ct.4 -100 0 100 200 300 400 500 600 700 800 -0.5 -0.3 -0.1 0.1 0.3 0.5 time ( s) v ce (v) -10 0 10 20 30 40 50 60 70 80 i ce (a) test current 90% test current 5% v ce 10% test current tr eon loss -100 0 100 200 300 400 500 600 700 800 -0.5 0.5 1.5 time( s) v ce (v) -5 0 5 10 15 20 25 30 35 40 i ce (a) 90% i ce 5% v ce 5% i ce eoff loss tf
irg7ph35upbf/IRG7PH35U-EP www.irf.com 9

to-247ac package is not recommended for surface mount application.

ye ar 1 = 2001 dat e code part number internat ional logo rectifier as s e mb l y 56 57 irfpe30 135h line h i ndi cates "l ead- f r ee" we e k 35 lot code in the assembly line "h" as s e mb l e d on ww 35, 2001 note: "p" in assembly line position example: wi t h as s e mb l y this is an irfpe30 lot code 5657
irg7ph35upbf/IRG7PH35U-EP 10 www.irf.com ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 03/2010 data and specifications subject to change without notice. this product has been designed and qualified for industrial market. qualification standards can be found on ir?s web site.

to-247ad package is not recommended for surface mount application. assembly year 0 = 2000 as s embled on ww 35, 2000 in the assembly line "h" example: t his is an irgp30b 120kd-e lot code 5657 with assembly part number dat e code int ernational rect ifier logo 035h 56 57 week 35 line h lot code note: "p" in as s embly line pos ition i ndi cates "l ead- f r ee"

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